Important Results:

1. Bond Center Hydrogen
2. H/D Isotope Effect
3. Structure Dependent Lifetimes
4. Hydrogen Bending Modes
5. Interstitial Oxygen in Si and Ge

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>> Bond Center Hydrogen

Bond-center hydrogen is the most fundamental H-related defect in Si, and plays a key role in the reactions of H with defects and impurities. It gives rise to an intense absorption line at 1998 cm^-1 due to the excitation of the stretch mode, where the H vibrates parallel to the Si-H-Si bond axis.

The lifetime of the stretch mode of bond-center hydrogen in crystalline silicon is measured to be T1 = 7.8±0.2 ps with time-resolved, transient bleaching spectroscopy. The low-temperature spectral width of the absorption line due to the stretch mode converges towards its natural width for decreasing hydrogen concentration CH, and nearly coincides with the natural width for CH ~ 1 ppm.

1. G. Lüpke, N. H. Tolk, L. C. Feldman, Vibrational Lifetimes of Hydrogen in Silicon, J. Appl. Phys. 93, 2003, pp. 2316-36.
2. C. Parks Cheney, M. Budde, G. Lüpke, N. H. Tolk, L. C. Feldman, Vibrational dynamics of isolated hydrogen in germanium, Phys. Rev. B 65, 2002, pp. 35214-22.
3. M. Budde, C. Parks Cheney, G. Lüpke, N. H. Tolk, L. C. Feldman, Vibrational Dynamics of Bond-Center Hydrogen in Crystalline Silicon, Phys. Rev. B 63, 2001, pp. 195203-21.
4. M. Budde, G. Lüpke, C. Parks Cheney, N. H. Tolk, L. C. Feldman, Vibrational Lifetime of Bond-Center Hydrogen in Crystalline Silicon, Phys. Rev. Lett. 85, 2000, pp. 1452-55.

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